features z epitaxial planar die construction z complementary pnp type available(pxt2907a) maximum ratings ( t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 75 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 6 v i c collector current -continuous 600 ma p c collector power dissipation 0.5 w t j junction temperature 150 t stg storage temperature -55 +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo i c = 10 a,i e =0 75 v collector-emitter breakdown voltage v (br)ceo i c = 10ma, i b =0 40 v emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 6 v collector cut-off current i cbo v cb =60v, i e =0 0. 01 a emitter cut-off current i ebo v eb = 5v , i c =0 0. 01 a h fe(1) v ce =10v, i c = 0.1ma 35 h fe(2) v ce =10v, i c = 1ma 50 h fe(3) v ce =10v, i c = 10ma 75 h fe(4) v ce =10v, i c = 150ma 100 300 h fe(5) v ce =1v, i c = 150ma 50 dc current gain h fe(6) v ce =10v, i c = 500ma 40 v ce(sat) i c =500ma, i b = 50ma 1 v collector-emitter saturation voltage v ce(sat) i c =150ma, i b =15ma 0.3 v v be(sat) i c =500ma, i b =50ma 2.0 v base-emitter saturation voltage v be(sat) i c =150ma, i b = 1 5ma 0.6 1.2 v transition frequency f t v ce =10v, i c =20ma f=100mhz 300 mhz output capacitance c ob v cb =10v, i e = 0,f=1mhz 8 pf delay time t d 10 ns rise time t r v cc =30v, i c =150ma v be(off) =0.5v,i b1 =15ma 25 ns storage time t s 225 ns fall time t f v cc =30v, i c =150ma i b1 =- i b2 = 15ma 60 ns sot-89 1. base 2. collector 3. emitter 1 2 3 PXT2222A transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics PXT2222A 2 date:2011/05 www.htsemi.com semiconductor jinyu
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